12-inch fully automatic grinding equipment
AG9500
AG9500 is an upgraded fully automatic grinding machine of AG6800. It is designed to provide precision grinding solutions for 8-12-inch wafers and is widely suitable for Si, IGBT, compound wafers and other materials. It adopts a dual-axis and three-station design to improve production efficiency and can stably achieve 100μm ultra-thin grinding processing; the stability is greatly improved through dual-spindle synchronous control, and the processing fragmentation rate is less than 1/10000. It also supports contact and non-contact height measurement systems, and is equipped with an intuitive and efficient GUI operation interface.
Processing size
Spindle configuration
| Classification | Parameter name | Parameter value |
|---|---|---|
| Processing size | - | 8"~12" |
| Configuration | Spindle form | Double spindle |
| Spindle | Output power | 7.5/8.3 kW |
| Speed range | 1000-6000 rpm | |
| Z axis | itinerary | 120 mm |
| Minimum feed speed | 6 μm/min | |
| Fast movement speed | 2 mm/s | |
| Minimum displacement | 0.1 μm | |
| altimeter | Measuring range | ±1 mm |
| resolution | 0.1 μm | |
| Repeat accuracy | ＜0.5 μm | |
| Vacuum suction cup | Suction cup type | porous ceramic suction cup |
| Speed range | 0-200 rpm | |
| Cleaning method | Whetstone brush cleaning | |
| grinding wheel | diamond grinding wheel | Φ313 mm |
| Vacuum pump | vacuum pressure | -90 kPa (water ≥15℃ flow ≥3L/min) |
| Power | 1.5 kW | |
| water consumption | 3 L/min | |
| Processing accuracy | Single wafer thickness difference | ≤3 μm |
| Different wafer thickness differences | ≤5 μm | |
| Processed surface roughness | Ra0.2 μm (325#) Ra0.02 μm (2000#) | |
| Device information | Width, depth and height | 1480×3140×1820 mm |
| weight | ≈5200 Kg |
Z-direction micro-feed control system
Grinding multiple pieces simultaneously
Real-time high-precision wafer thickness measurement
Ultra-thin wafer processing
More features or custom features
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silicon wafer
Silicon carbide SiC wafer
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