Fully automatic grinding, polishing, sticking and peeling film all-in-one machine
JTA-9612
JTA-9612 is a fully automatic grinding, polishing, pasting and peeling machine that integrates wafer backside grinding and stress relief processes. It can achieve ultra-thin wafer processing below 25μm and is suitable for precision grinding and polishing of semiconductors, optical glass, ceramics and other materials. The equipment adopts a three-axis four-station structure, with a conventional wafer production capacity of WPH ≥ 20pcs; it is equipped with a large-size dry polishing pad to achieve nano-level smoothness, with a processing fragmentation rate of ≤ 1/10000. It has an optional contact/non-contact dual height measurement solution, and can also meet the production needs of multiple types of processes such as DBG and SDBG.
Processing size
Spindle configuration
| Classification | Parameter name | Parameter value |
|---|---|---|
| Processing size | - | Max. 300 mm（8"/12"） |
| Configuration | Spindle form | Three spindles |
| Spindle | Output power | ≥6.3 kW |
| Speed range | 1000-4000 rpm | |
| Z axis | Z1/Z2 stroke | 120 mm / 65 mm |
| Z3 stroke | 65 mm | |
| Feed speed | 6 m/min | |
| Fast movement speed | 2 mm/s | |
| Minimum displacement | 0.1 μm | |
| resolution | 0.1 μm | |
| altimeter | Measuring range | 0-1250 μm |
| resolution | 0.1 μm | |
| Repeat accuracy | ±0.5 μm | |
| X axis (Z3) | itinerary | 290 mm |
| resolution | 2 μm | |
| Movement speed | ≤200 mm/s | |
| Vacuum suction cup | Suction cup type | porous ceramic suction cup |
| Quantity | 4 | |
| Speed range | 0-300 rpm | |
| Cleaning method | Whetstone automatic cleaning | |
| grinding wheel | diamond grinding wheel | Φ313 mm |
| polishing wheel | Dry polishing wheel Φ458 mm | |
| Vacuum pump | vacuum pressure | -90 kPa (water ≥15℃ flow ≥3L/min) |
| Power | 1.5 kW | |
| water consumption | 3 L/min | |
| Processing accuracy (grinding and polishing) | Single wafer thickness difference | ≤2.5 μm |
| Difference in thickness of wafers in the same batch | ≤3 μm | |
| surface roughness | Ra0.2 μm (325#) Ra0.02 μm (2000#) Ra0.005 μm (Polishing) | |
| UV unit | - | Air cooling, temperature monitoring |
| Non-contact edge finder | - | Have |
| heater | temperature range | MAX 100°C ±3°C |
| Processing accuracy (sticking and tearing film) | Wafer placement accuracy | X/Y ±0.5 mm ±0.5°C |
| Dicing tape accuracy | X/Y ±1 mm | |
| Device information | Width, depth and height | 3300×4400×1800 mm |
| weight | 9100 Kg |
Z-direction micro-feed control system
Grinding multiple pieces simultaneously
Real-time high-precision wafer thickness measurement
Ultra-thin wafer processing
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